ISSN print edition: 0366-6352
ISSN electronic edition: 1336-9075
Registr. No.: MK SR 9/7

Published monthly
 

Preparation of Ga3+:ZnO quantum dots and the photoelectric properties of sensitized polycrystalline silicon solar cells

Ling-Ling Zhou, Gang Wu, Jie Liu, and Xi-Bin Yu

Department of Food and Environmental Engineering, Chuzhou Vocational and Technical College, Chuzhou, China

 

E-mail: zhoulingling@chzc.edu.cn

Received: 22 February 2020  Accepted: 23 May 2020

Abstract:

The Ga3+:ZnO quantum dots/Si solar cells were prepared, based on the polycrystalline silicon. The photoelectric properties, including the absorption and reflection, the electrical properties, the minority carrier lifetime and the quantum efficiency, have been investigated and analyzed. The results showed that the deposed Ga3+:ZnO quantum dots could increase the carrier concentration and the Hall mobility, improve the life of the minority, reduce the series resistance of the photovoltaic device effectively and reduce the energy loss of the polycrystalline silicon solar cell. Thus, the photoelectric response performance parameters of the Ga3+:ZnO/Si solar cells were upgraded degrees and its photoelectric conversion efficiency was improved.

Keywords: Quantum dots; Doping; Resistivity; Transmission rate; Photoelectric conversion efficiency

Full paper is available at www.springerlink.com.

DOI: 10.1007/s11696-020-01339-3

 

Chemical Papers 75 (2) 805–811 (2021)

Wednesday, April 24, 2024

IMPACT FACTOR 2021
2.146
SCImago Journal Rank 2021
0.365
SEARCH
Advanced
VOLUMES
European Symposium on Analytical Spectrometry ESAS 2022
© 2024 Chemical Papers